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IMAGE SENSOR
CCD area image sensor
S9736 series
512 x 512 pixels, front-illuminated FFT-CCDs
S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9736 series also features low noise and low dark current (MPP mode operation). These enable low-light-level detection and long integration time, thus achieving a wide dynamic range. Three different packages (ceramic DIP, metal, plate type) are provided. Metal package type (S9736-02) has a four-stage TE-cooled element built into the same package for thermoelectric cooling. At room temperature operation, the device can be cooled down to -70 C with using forced air cooling. In addition, since both the CCD chip and TE-cooled element are hermetically sealed, no dry air is required, thus allowing easy handling.
Features
Applications
l 512 (H) x 512 (V) pixel format l Pixel size: 24 x 24 m l 100 % fill factor l Wide dynamic range l Low dark current l Low readout noise l MPP operation l 3 types of packages are available
l Astronomy l Scientific measuring instrument l Fluorescence spectrometer l Raman spectrophotometer l Optical and spectrophotometric analyzer l For low-light-level detection requiring
s General ratings
Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Cooling Package Window S9736-01 S9736-02 Full frame transfer 100 % 512 (H) x 512 (V) 24 (H) x 24 (V) m 12.288 (H) x 12.288 (V) mm 2 phase 2 phase One-stage MOSFET source follower Four-stage TE-cooled 28-pin metal package AR coated Sapphire S9736-03
Non-cooled 24-pin ceramic DIP None
Non-cooled Plate type None
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Operating temperature Storage temperature CCD cooling temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -70 -0.5 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15 Typ. -
S9736 series
Max. +30 +70 +30 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit C C C V V V V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 18 12 -0.5 -8 -8 0 -9 0 -9 0 -9 0 -9 0 -9 Typ. 20 13 2 0 VRD VRD 0 0 3 -8 3 -8 3 -8 3 -8 3 -8 Max. 22 14 6 -7 6 -7 6 -7 6 -7 6 -7 Unit V V V V V V V V V V V V V
High Low High Low High Low High Low High Low
s Electrical characteristics (Ta=25 C)
Parameter Symbol Remark Min. Signal output frequency fc Vertical shift register capacitance CP1V, CP2V Horizontal shift register capacitance CP1H, CP2H Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Transfer efficiency CTE *1 0.99995 DC output level Vout *2 12 Output impedance Zo *2 Power dissipation P *2, *3 *1: Charge transfer efficiency per pixel, measured at half of the full well capacity. *2: The values depend on the load resistance. (VOD=20 V, Load resistance=22 k) *3: Power dissipation of the on-chip amplifier. Typ. 0.1 6000 200 5 5 50 0.99999 15 3 15 Max. 1 18 Unit MHz pF pF pF pF pF V k mW
2
CCD area image sensor
sElectrical and optical characteristics (Ta=25 C, unless otherwise noted)
S9736 series
Parameter Symbol Remark Min. Typ. Max. Unit Saturation output voltage Vsat Fw x Sv V Vertical 150 300 Full well Fw kecapacity Horizontal 360 CCD node sensitivity Sv *4 3.5 V/e+25 C 200 3000 Dark current 0 C DS *5 10 150 e-/pixel/s (MPP mode) -70 C 0.001 0.01 Readout noise Nr *6 4 18 e-rms 7 Dynamic range (Area scanning) * 75000 Spectral response range 400 to 1100 nm Photo response non-uniformity PRNU *8 10 % Point defects *9 0 Blemish Cluster defects *10 0 Column defects *11 0 *4: VOD=20 V , Load resistance=22 k *5: Dark current nearly doubles for every 5 to 7 C increase in temperature. *6: -40 C, operating frequency is 80 kHz. *7: DR = Fw / Nr *8: Measured at half of the full well capacity. PRNU = noise / signal x 100 [%], noise: fixed pattern noise (peak to peak) *9: White spots > 3 % of full well at 0 C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent pixels *10: A group of 2 to 9 continuous point defects *11: A group of 10 or more continuous point defects
s Pin connections (S9736-01)
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol RG RD OS OD OG SG P2H NC P1H NC IG2H IG1H ISH TG P2V NC P1V NC NC SS NC ISV IG2V IG1V Description Reset gate Reset drain Output source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 No connection CCD horizontal register clock-1 No connection Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 No connection CCD vertical register clock-1 No connection No connection Substrate (GND) No connection Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Remark Shorted to ground Shorted to ground Shorted to RD Shorted to RD Shorted to ground Shorted to ground
3
CCD area image sensor
s Pin connections (S9736-02)
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Symbol PNC SS NC ISV IG2V IG1V RG RD OS OD OG SG P+ TSH1 TSC1 TSC2 P2H P1H IG2H IG1H ISH P2V P1V TG NC NC TSH2 Description TE-coolerSubstrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Reset gate Reset drain Output transistor source Output transistor drain Output gate Summing gate TE-cooler+ Temperature sensor (hot side) Temperature sensor (cool side) Temperature sensor (cool side) CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) CCD vertical register clock-2 CCD vertical register clock-1 Transfer gate
S9736 series
Remark
Shorted to RD Shorted to 0 V Shorted to 0 V
Same timing as P2H
Shorted to 0 V Shorted to 0 V Shorted to RD
Same timing as P2V *12
Temperature sensor (hot side)
s Pad connections (S9736-03)
Pad No. Symbol Description 1 RG Reset gate 2 RD Reset drain 3 OS Output transistor source 4 OD Output transistor grain 5 OG Output gate 6 SG Summing gate 7 NC 8 NC 9 P2H CCD horizontal register clock-2 10 P1H CCD horizontal register clock-1 11 IG2H Test point (horizontal input gate-2) 12 IG1H Test point (horizontal input gate-1) 13 ISH Test point (horizontal input source) 14 P2V CCD vertical resister clock-2 15 P1V CCD vertical resister clock-1 16 TG Transfer gate 17 NC 18 NC 19 NC 20 SS Substrate (GND) 21 NC 22 ISV Test point (vertical input source) 23 IG2V Test point (vertical input gate-2) 24 IG1V Test point (vertical input gate-1) *12: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse of P2V should be applied to the TG. Remark
Same timing as P2V*12
4
CCD area image sensor
s Spectral response (without window)
(Typ. Ta=25 C)
S9736 series
s Spectral transmittance characteristics of window material
100 (Typ. Ta=25 C)
50
QUANTUM EFFICIENCY (%)
40
TRANSMITTANCE (%)
95 AR COATED SAPPHIRE
30
90
20
85
10
0 400
500
600
700
800
900
1000 1100 1200
80 400
500
600
700
800
900
1000 1100 1200
WAVELENGTH (nm)
KMPDB0244EA
WAVELENGTH (nm)
KMPDB0106EA
s Dimensional outlines (unit: mm) S9736-01
27.0 12.288 24 13 R1.2
22.73 0.3 23.11 0.3 22.86 0.3 12.288
S9736-02
PIN No. 1
1.3 0.3
20.0 12.288 4.0 1.0 7.0
1st PIN INDEX MARK
2 3
12.288
27 26
27.94
2.4
36.0
44.0
PHOTOSENSITIVE SURFACE 12 PIN No. 1 30.48 0.3
1.27
3.0
14
15
35.0
2.54
KMPDA0140EB
PINCHED OFF TUBE
5.0
47.0 AR-COATED SAPPHIRE WINDOW
PHOTOSENSITIVE SURFACE
18.5 0.5
S9736-03
26.00 0.3 12.288 0.625 0.635 0.07
50.8
6.3 0.5
FOUR-STAGE TE-COOLER
19 24 1 6
18 13 12 7
21.00 0.3
12.288
KMPDA0142EB
0.635 0.07
KMPDA0183EA
2.54
12 13
17 16
50.0
0.46
28
5
CCD area image sensor
s Device structure, line output format (S9736-01)
IG1V IG2V ISV 24 23 22 SS 20 TG 14 P1V 17 P2V 15
S9736 series
V
V=512 H=512 ......
H
RG RD OS
1
D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12
......
1
2 3
......
D13 D14 D15 D16 D17 D18 D19 D20
13 ISH 12 IG1H
4 OD
5 OG
6 SG 4 BLANK
4 ISOLATION 4 OPTICAL BLACK
512 SIGNAL OUT
7 9 P2H P1H
11 IG2H
4 ISOLATION 4 BLANK
KMPDC0207EA
Pixel format
Blank 4 Optical Black 4 Left Horizontal Direction Right Isolation Effective Isolation 4 512 4 Top Vertical Direction Bottom Isolation Effective Isolation 4 512 4 Optical Black Blank 4
s Timing chart q Area scanning 1 (low dark current mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 4..519 520512+8 (ISOLATION) READOUT PERIOD (Shutter must be closed)
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D12, S1..S512, D13..D17
D19
D20
KMPDC0208EA
6
CCD area image sensor
Parameter Symbol Remark Pulse width Tpwv *13 Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh *13 Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *13: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. P1V P2V, TG Min. 6 200 500 10 500 10 100 5 3
S9736 series
Typ. 18 5000 50 5000 50 500 6 Max. Unit s ns ns ns % ns ns % ns ns s
q Area scanning 2 (large full well mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 4..519 520512 + 8 (ISOLATION) READOUT PERIOD (Shutter must be closed)
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D12, S1..S512, D13..D17
D19
D20
KMPDC0209EA
Parameter Symbol Remark Pulse width Tpwv *14 Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh *14 Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. P1V P2V, TG
Min. 6 200 500 10 500 10 100 5 3
Typ. 18 5000 50 5000 50 500 6
Max. -
Unit s ns ns ns % ns ns % ns ns s
7
CCD area image sensor
s Specifications of built-in TE-cooler (S9736-02)
Parameter Internal resistance Maximum current *15 Maximum voltage Maximum heat absorption *18 Symbol Rint Imax Vmax Qmax Condition Ta=27 C Th *16=27 C T *17=Tmax Th*16=27 C T=Tmax I=Imax Tc *19=Th *16=27 C I=Imax Min. -
S9736 series
Typ. 1.6 Max. 4.4 7.4 3.0 Unit A V W
Maximum temperature at hot side 50 C CCD temperature Ta=25 C -70 -50 C *15: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation, the supply current should be less than 60 % of this maximum current. *16: Temperature at hot side of thermoelectric cooler. *17: T=Th - Tc *18: This is a theoretical heat absorption level that offsets the temperature difference in the TE-cooled element when the maximum current is supplied to the unit. *19: Temperature at cool side of thermoelectric cooler.
6 V-I CCD TEMPERATURE - I (Typ. Ta=25 C) 40
5
20
VOLTAGE (V)
4
0
3
-20
2
-40
1
-60
0 0 0.5 1.0 1.5 2.0 2.5
-80 3.0
CURRENT (A)
KMPDB0107EA
s Specifications of built-in temperature sensors (S9736-02)
Parameter Resistance at cool side Temperature coefficient of resistance at cool side Resistance at hot side Temperature coefficient of resistance at hot side
1400 1200 1000 800 600 400 200 0 -100 (Typ. Ta=25 C)
CCD TEMPERATURE (C)
Symbol Rc Rh -
Condition T=0 C T=0 C -
Min. -
Typ. 1000 0.00375 1000 0.00385
Max. -
Unit / /
RESISTANCE ()
-80
-60
-40
-20
0
20
40
TEMPERATURE (C)
KMPDB0108EA
8
CCD area image sensor
s Precaution for use (electrostatic countermeasures)
S9736 series
q Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. q Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. q Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. q Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
s Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1080E03 Apr. 2005 DN
9

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